PIEZOELECTRIC FILM AND METHOD FOR MANUFACTURING SAME
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United States of America Patent
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app pub date -
Sep 30, 2015
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Apr 1, 2013
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Abstract
Provided is a piezoelectric film having a perovskite type crystal structure represented by the following Formula (P), in which a piezoelectric constant d31 (pm/V), a relative dielectric constant ∈(−), and a dielectric loss tan δ(−) satisfy (d31)2/(∈×tan δ×1000)>3. In addition, a method for manufacturing the above piezoelectric film is provided.
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