Resistive switching by breaking and re-forming covalent bonds
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jan 21, 2016
app pub date -
Jul 21, 2014
filing date -
Jul 21, 2014
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A variable resistance layer in a resistive non-volatile memory (ReRAM) cell changes its resistance in response to an applied signal by breaking and re-forming covalent bonds (e.g., in sub-stoichiometric silicon oxide). Resistivity decreases with increasing density of broken “dangling” bonds. When an electric field is applied, more dangling bonds are created, forming a filament of defects through which charge carriers can tunnel through the covalent layer. Passing a high current through the dangling-bond filament causes localized heating that re-forms the bonds. Optionally, an ionic oxide or nitride layer in contact with the covalent switching layer may serve as an oxygen source for thermal re-oxidation during the heating.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully