Importance

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Abstract

This sensor, comprises: a first surface acoustic wave device, comprising a first piezoelectric substrate, formed from a (YXw/t)/φ/θ/ψ cut of a Langasite crystal, where φ is equal to 0±5° is equal to 55±20° and ψ is equal to 32.5±7.5° and a first resonator having a first transducer laying on a first propagation surface and having two sets of interdigitated first electrodes formed from an electrically conductive material having a high melting temperature; and a second surface acoustic wave device, comprising a second piezoelectric substrate, formed from a (YXw/t)/φ/θ/ψ cut of a Langasite crystal, where φ is equal to 0±5°, θ is equal to 5±20° and ψ is equal to 0±7.5°, and a second resonator having a second transducer laying on a second propagation surface and having two sets of interdigitated second electrodes formed from an electrically conductive material having a high melting temperature; said first and second surface acoustic wave devices being independent one from the other in terms of surface acoustic wave propagation.

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First Claim