Interleaved grouped word lines for three dimensional non-volatile storage
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United States of America Patent
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Apr 18, 2017
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app pub date -
Jul 25, 2014
filing date -
Jul 25, 2014
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Abstract
A three dimensional non-volatile storage system includes a substrate and a plurality of memory cells arranged in a monolithic three dimensional memory array (or other 3D structure) positioned above and not in the substrate. The system includes a plurality of vertical bit lines and a plurality of word lines. Each group of three neighboring word lines on a common level of the three dimensional memory array are electrically isolated from each other and at least a subset of the three neighboring word lines of each group are connected to other word lines.
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