PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Jan 28, 2016
app pub date -
Mar 10, 2014
filing date -
Mar 15, 2013
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Abstract
One production method for semiconductor devices includes sequentially forming a stopper film and a BPSG film, forming a cylinder etch laminated mask upon the BPSG film, forming openings having a prescribed pattern in the cylinder etch laminated mask, then, using same as a mask, forming a cylinder hole that pierces from the BPSG film to the stopper film in the thickness direction. Next, forming a conductive layer that adjoins the side surfaces of the BPSG film, the stopper film, and a polysilicon film being part of the cylinder etch laminated mask, then removing the polysilicon film and the BPSG film .
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