Semiconductor Device and Method of Manufacturing the Same
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United States of America Patent
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Issued Date -
Jan 28, 2016
app pub date -
Jul 17, 2015
filing date -
Jul 24, 2014
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Abstract
A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes a substrate and a MOS transistor formed on the substrate. The MOS transistor includes a first gate insulating layer formed on the substrate, a second gate insulating layer formed on one side of the first gate insulating layer and having a thickness thicker than that of the first gate insulating layer, a gate electrode formed on the first gate insulating layer and the second gate insulating layer, a source region adjacent to the first gate insulating layer, and a drain region adjacent to the second gate insulating layer.
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