Thin Active Layer Fishbone Photodiode With A Shallow N+ Layer and Method of Manufacturing the Same
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United States of America Patent
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Issued Date -
Feb 4, 2016
app pub date -
Apr 13, 2015
filing date -
May 7, 2007
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises a photodiode array and method of manufacturing a photodiode array that provides for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application.
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