BIASING A SILICON-ON-INSULATOR (SOI) SUBSTRATE TO ENHANCE A DEPLETION REGION
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United States of America Patent
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Issued Date -
Feb 4, 2016
app pub date -
Jul 30, 2014
filing date -
Jul 30, 2014
priority date (Note) -
Abandoned
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Abstract
A device includes a silicon-on-insulator (SOI) substrate comprising a bulk silicon (Si) substrate, a buried oxide layer over the bulk Si substrate and a silicon device layer over the buried oxide layer, a first substrate tap and a second substrate tap located in the buried oxide layer and the silicon device layer, the first and second substrate taps in contact with the bulk Si substrate, and an initial depletion region located in the bulk Si substrate below the buried oxide layer and associated with at least one of the first substrate tap and the second substrate tap, the first substrate tap and the second substrate tap configured to increase the initial depletion region based on an applied bias voltage.
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