MEMORY CELL SUPPORT LATTICE
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United States of America Patent
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app pub date -
Oct 7, 2015
filing date -
Aug 21, 2012
priority date (Note) -
Abandoned
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Abstract
Memory cell support lattices and methods of forming the same are described herein. As an example, a method of forming a memory cell support lattice includes forming a mask on a number of capacitor elements in an array, such that a space between vertically and horizontally adjacent capacitor elements is fully covered and a space between diagonally adjacent capacitor elements is partially covered and forming a support lattice in a support material by etching the support material to remove portions of the support material below the openings in the mask.
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