MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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app pub date -
Feb 13, 2015
filing date -
Aug 8, 2014
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Abandoned
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Abstract
A memory device according to one embodiment includes a resistance change film, an insulating film provided on the resistance change film, a first wiring provided on the insulating film and being not in contact with the resistance change film, and a high resistance film having a higher resistivity than the first wiring. The high resistance film is provided on a side surface of a stacked body including the insulating film and the first wiring, and the high resistance film is electrically connected between the first wiring and the resistance change film.
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