Importance

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Abstract

The present invention provides a Group III nitride semiconductor light-emitting device which attains suitable light extraction to the outside by reflecting the light directed from a substrate to a semiconductor layer toward the substrate, and a production method therefor. The light-emitting device comprises a substrate, a buffer layer, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, and a plurality of dielectric multilayer films. The dielectric multilayer films are disposed on the first surface of the substrate. The first surface of the substrate has at least a bottom surface. The buffer layer is formed on at least a part of the bottom surface. The dielectric multilayer films have inclined planes inclined to the bottom surface. The n-type semiconductor layer is formed on the buffer layer and the inclined planes of the dielectric multilayer films.

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First Claim