ETCHING SOLUTION, ETCHING SOLUTION KIT, ETCHING METHOD USING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE PRODUCT
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United States of America Patent
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app pub date -
Oct 30, 2015
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May 2, 2013
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Abandoned
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Abstract
There is provided an etching solution of a semiconductor substrate that includes a first layer containing germanium (Ge) and a second layer containing a specific metal element other than germanium (Ge), the etching solution selectively removing the second layer and including an organic alkali compound.
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