Two-dimensional large-area growth method for chalcogen compound, method for manufacturing CMOS-type structure, film of chalcogen compound, electronic device comprising film of chalcogen compound, and CMOS-type structure
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 24, 2017
Grant Date -
Feb 18, 2016
app pub date -
Mar 19, 2014
filing date -
Mar 22, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Provided is a two-dimensional large-area growth method for a chalcogen compound, the method including: depositing a film of a transition metal element or a Group V element on a substrate; thereafter, uniformly diffusing a vaporized chalcogen element, a vaporized chalcogen precursor compound or a chalcogen compound represented by M′X′2+δ within the film; and, thereafter, forming a film of a chalcogen compound represented by MX2 by forming the chalcogen compound represented by MX2 through post-heating.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully