Process for fabricating silicon nanostructures

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United States of America Patent

PATENT NO 9859366
SERIAL NO

14924273

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Abstract

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A process for etching a substrate comprising polycrystalline silicon to form silicon nanostructures includes depositing metal on top of the substrate and contacting the metallized substrate with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.

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Patent Owner(s)

Patent OwnerAddress
ADVANCED SILICON GROUP TECHNOLOGIES LLC173 BEDFORD ROAD LINCOLN MA 01773

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Black, Marcie R Salem, US 46 490
Buchine, Brent A Watertown, US 26 218
Modawar, Faris Orem, US 22 165

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