Method for manufacturing silicon carbide semiconductor device having trench
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United States of America Patent
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Oct 17, 2017
Issued Date -
Feb 18, 2016
app pub date -
Mar 5, 2014
filing date -
Apr 16, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
A trench having an opening and a corner portion is formed in a silicon carbide substrate. A corner insulating film is formed to cover the corner portion. A gate insulating film is formed to cover a region extending from the opening to the corner portion. The step of forming the gate insulating film includes a step of thermally oxidizing the trench provided with the corner insulating film. The step of thermally oxidizing the trench includes a step of heating the silicon carbide substrate at not less than 1300° C. Accordingly, sufficient insulation reliability of the gate insulating film is secured near the opening of the trench while preventing dielectric breakdown of the gate oxide film at the bottom portion of the trench.
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