METHOD OF EPITAXIAL GROWTH OF A GERMANIUM FILM ON A SILICON SUBSTRATE
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United States of America Patent
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Issued Date -
Feb 25, 2016
app pub date -
Nov 27, 2014
filing date -
Aug 21, 2014
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Abandoned
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Abstract
A method of epitaxial growth of a germanium film on a silicon substrate includes the steps of: providing a silicon substrate, placing the silicon substrate in a vacuum chamber, heating the silicon substrate to a temperature that is lower than 300° C., and forming a monocrystalline germanium film on the silicon substrate in the vacuum chamber, by employing an electron cyclotron resonance chemical vapor deposition (ECR-CVD) approach, wherein the step of forming a monocrystalline germanium film on the silicon substrate in the vacuum chamber further includes dissociating a reaction gas introduced into the vacuum chamber in utilization of a microwave source, such that the monocrystalline germanium film is deposited on the silicon substrate, and wherein the reaction gas includes at least germane (GeH4) and hydrogen gas (H2).
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