Importance

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Abstract

A method of manufacturing a semiconductor device includes forming a first layer comprising an organic film above a work layer; forming a second layer comprising an inorganic film above the organic film; forming a third layer above the second layer; and forming an opening pattern into the third layer. The method further includes etching the second layer, the first layer, and the work layer using the third layer as a mask, the etching progressing obliquely through the first layer to form a slope in the first layer. The method still further includes removing the first layer to cause the second layer to be disposed in direct contact with the work layer to thereby form a step portion.

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First Claim