NITRIDE LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Feb 25, 2016
app pub date -
Mar 24, 2014
filing date -
Mar 29, 2013
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Abstract
Provided is a nitride light emitting element which achieves a high light extraction efficiency even at a low operation voltage and which can be manufactured by means of a simple process. A nitride light emitting element 1 has, on a support substrate 11, an n-type layer 35, a p-type layer 31, and a light emitting layer 33 formed at a position interposed between the n-type layer 35 and the p-type layer 31. The n-type layer 35 is constituted of AlxGa1-xN (0
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