Methodology for annealing group III-nitride semiconductor device structures using novel weighted cover systems
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United States of America Patent
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Oct 29, 2019
Grant Date -
Mar 3, 2016
app pub date -
Aug 24, 2015
filing date -
Aug 25, 2014
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Abstract
An improved methodology for annealing group III-nitride semiconductor device structures using novel weighted cover systems that protect an annealing cap during the semiconductor annealing process is disclosed. The weighted cover system is configured for preventing the escape of nitrogen from the capped semiconductor during annealing. In one particular embodiment, the weighted cover system comprises a protective cover configured to be placed on the capped semiconductor during the anneal, and one or more weights configured to be placed on the protective cover to provide sufficient downward force to the protective cover that is placed on the capped semiconductor.
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