Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
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United States of America Patent
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Apr 18, 2017
Grant Date -
Mar 3, 2016
app pub date -
Mar 5, 2014
filing date -
Apr 16, 2013
priority date (Note) -
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Abstract
A silicon carbide substrate has first to third semiconductor layers. The first and third semiconductor layers have a first conductivity type, and the second semiconductor layer has a second conductivity type. A trench has a bottom surface and first to third side surfaces, the bottom surface being constituted of the first semiconductor layer, the first to third side surfaces being respectively constituted of the first to third semiconductor layers. A gate insulating film having a bottom portion and a side wall portion is provided on the trench. The bottom portion has a minimum thickness d0. A portion of the side wall portion on the second side surface has a minimum thickness d1. A portion, connected to the bottom portion, of the side wall portion on the first side surface has a thickness d2. Moreover, d2>d1 and d2>d0 are satisfied.
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