METHOD FOR FABRICATING THIN FILM TRANSISTOR AND APPARATUS THEREOF
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United States of America Patent
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Mar 10, 2016
app pub date -
Feb 16, 2015
filing date -
Sep 10, 2014
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Abstract
A method for fabricating a thin film transistor (TFT) is provided, and the method includes following steps. A gate and an insulation layer are sequentially formed on a substrate. A source electrode and a drain electrode are formed on the insulation layer. A solution type metal oxide precursor is coated on the insulation layer above the gate. A gas is provided, and the gas does not react with the solution type metal oxide precursor. An illumination process is performed on the solution type metal oxide precursor, so as to form a metal oxide semiconductor material through a photo cross-linking reaction of the solution type metal oxide precursor.
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