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Abstract

A gas barrier film is provided including a polymer film substrate and a gas barrier layer containing at least zinc oxide and silicon dioxide on at least one surface of the polymer film substrate, wherein the gas barrier layer satisfies at least one of the following [I] to [III]: [I] with regard to X-ray absorption near edge structure (XANES) spectrum at K absorption edge of zinc, the value of (spectrum intensity at 9664.0 eV)/(spectrum intensity at 9668.0 eV) is in the range of 0.910 to 1.000; [II] the value obtained by dividing atomic concentration of zinc with atomic concentration of silicon is in the range of 0.1 to 1.5, and structural density index represented by the following equation: structural density index={density of the gas barrier layer obtained by X-ray reflectometry (XRR)}/{(theoretical density calculated from compositional ratio determined by X-ray photoelectron spectroscopy (XPS)} is 1.20 to 1.40; and [III] when peak in the wave number range of 900 to 1,100 cm⁻¹ measured in FT-IR measurement is subjected to peak separation into the wave number of 920 cm⁻¹ and the wave number of 1,080 cm⁻¹, the value of ratio (A/B) of integrated intensity of the spectrum having its peak at 920 cm⁻¹ (A) to integrated intensity of the spectrum having its peak at 1,080 cm⁻¹ (B) is at least 1.0 and up to 7.0.

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