METHOD OF ERASING A NONVOLATILE MEMORY FOR PREVENTING OVER-SOFT-PROGRAM
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United States of America Patent
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Issued Date -
Mar 17, 2016
app pub date -
Sep 13, 2014
filing date -
Sep 13, 2014
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Abandoned
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Abstract
A method of erasing a nonvolatile memory for preventing over-soft-program comprises performing an erase operation on at least one cell among a plurality of cells in the nonvolatile memory; applying a first soft program verify operation; applying a second soft program verify operation, wherein the second verify voltage is lower than the first verify voltage; determining whether the threshold voltage of the cell is lower than the first verify voltage or the second verify voltage; performing a soft program operation with a first soft program voltage when the threshold voltage of the cell is lower than the first verify voltage and higher than the second verify voltage; and performing the soft program operation with a second soft program voltage higher than the first soft program voltage when the threshold voltage of the cell is lower than both of the first verify voltage and the second verify voltage.
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