Importance

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Abstract

A vertical transistor includes an electrically conductive gate structure having a reentrant profile in contact with a substrate. A conformal gate insulating layer is in contact with the gate structure in the reentrant profile. A conformal semiconductor layer is in contact with the conformal gate insulating layer. A first electrode is in contact with a first portion of the conformal semiconductor layer over the electrically conductive gate structure. A second electrode is in contact with a second portion of the conformal semiconductor layer and separated vertically from the first electrode. The vertical TFT has a multilayer insulating structure that is in contact with at least the conformal semiconductor layer in the reentrant profile. The multilayer insulating structure includes an inorganic dielectric layer and a polymer structure in contact with the conformal semiconductor layer in the reentrant profile.

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First Claim