SOLID STATE IMAGING DEVICE AND METHOD OF FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Mar 24, 2016
app pub date -
Feb 23, 2015
filing date -
Sep 24, 2014
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
According to one embodiment, a semiconductor substrate has a first region in which a photoelectric conversion device is provided, a second region which is provided around the first region, and in which a device is provided, and a third region which is provided between the first region and the second region, and in which the photoelectric conversion device is provided. A first interlayer insulating film is provided on the first region and the third region. A second interlayer insulating film is provided on the second region, and is thicker than the first interlayer insulating film. A resin material is provided on the first interlayer insulating film of the first region, and provided so as to cover a groove of a surface of the first interlayer insulating film of the third region.
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