METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
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United States of America Patent
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Mar 31, 2016
app pub date -
Sep 18, 2015
filing date -
Sep 30, 2014
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Abstract
The present invention provides a technology that includes: forming an intermediate film on a substrate having an insulating film formed thereon; and forming a metal film on the intermediate film. The intermediate film is more susceptible to oxidation than the metal film and has a smaller thickness than the metal film.
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