Semiconductor device
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United States of America Patent
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Jul 18, 2017
Grant Date -
Mar 31, 2016
app pub date -
Mar 3, 2015
filing date -
Sep 26, 2014
priority date (Note) -
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Abstract
A semiconductor device includes first and second semiconductor regions, and a third semiconductor region between the first and second semiconductor regions, wherein the dopant concentration of the third semiconductor region is greater than the dopant concentration of the second semiconductor region. The semiconductor device further includes a fourth semiconductor region selectively provided on an upper surface of the second semiconductor region, wherein a portion of the second semiconductor region is interposed between the third semiconductor region and the fourth semiconductor region, an insulating layer disposed on the second semiconductor region and the fourth semiconductor region and having an opening that exposes a portion of a top surface of the fourth semiconductor region, wherein the ratio of an area of opening to an area of the top surface is from 10% to 90%, and a wiring layer on the insulating layer and connected to the fourth semiconductor region via the opening.
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