SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Aug 20, 2015
filing date -
Sep 30, 2014
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Abstract
A semiconductor device includes: a semiconductor substrate; a ferroelectric capacitor above the semiconductor substrate; a first guard ring around the ferroelectric capacitor above the semiconductor substrate. The ferroelectric capacitor includes a bottom electrode, a capacitor insulating film and a top electrode. The first guard ring includes a first pseudo bottom electrode, a first pseudo capacitor insulating film and a first pseudo top electrode, and surrounds the ferroelectric capacitors in planar view.
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