SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD

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United States of America Patent

APP PUB NO 20160093649A1
SERIAL NO

14863861

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method for manufacturing a semiconductor device may include the following steps: preparing a substrate; providing a gate material layer that overlaps the substrate; providing a blocking layer that partially covers the gate material layer; removing a portion of the gate material layer that is not covered by the blocking layer for forming a gate electrode; providing a blocking material layer that covers both the blocking layer and the substrate; removing a portion of the blocking material layer for forming a blocking member that has an opening, wherein the opening partially exposes the blocking layer and partially exposes the substrate; and performing ion implantation through the opening to form a doped well region in the substrate.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATIONSHANGHAI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, Fugang Shanghai, CN 3 11
HUANG, Feng Shanghai, CN 123 844
LIN, Shuaibing Shanghai, CN 2 0
WANG, Xuemei Shanghai, CN 63 715

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