FULLERENE DERIVATIVE AND N-TYPE SEMICONDUCTOR MATERIAL

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20160093807A1
SERIAL NO

14891419

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

The present invention is a material that exhibits excellent properties as an n-type semiconductor, in particular for use in organic thin-film solar cells. The present invention relates to a fullerene derivative represented by formula (1):

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
DAIKIN INDUSTRIES LTDOSAKA JAPAN OSAKA
OSAKA UNIVERSITY1-1 YAMADAOKA SUITA-SHI OSAKA 5650871

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
ADACHI, Kenji Osaka, JP 94 587
ASO, Yoshio Osaka, JP 35 148
IE, Yutaka Osaka, JP 21 32
KARAKAWA, Makoto Osaka, JP 4 3
NAGAI, Takabumi Osaka, JP 14 33

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation