Structure and method to increase contact area in unmerged EPI integration for CMOS FinFETs
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United States of America Patent
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Jun 7, 2016
Grant Date -
Apr 7, 2016
app pub date -
Oct 2, 2014
filing date -
Oct 2, 2014
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Abstract
Source/drain contact structures with increased contact areas for a multiple fin-based complementary metal oxide semiconductor field effect transistor (CMOSFET) having unmerged epitaxial source/drain regions and methods for forming such source/drain contact structures are provided by forming wrap-around source/drain contact structures for both n-type FinFETs and p-type FinFETs. Each of first source/drain contact structures for the n-type FinFETs includes at least one first conductive plug encapsulating epitaxial first source/drain regions on one side of a gate structure, while each of second source/drain contact structures for the p-type FinFETs includes at least a contact metal layer portion encapsulating epitaxial second source/drain regions on one side of the gate structure, and a second conductive plug located over a top surface of the contact metal layer portion.
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