Writable device based on alternating current

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United States of America Patent

PATENT NO 9552877
APP PUB NO 20160104531A1
SERIAL NO

14889738

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Abstract

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A nonvolatile memory device is writable to a high resistance state and a low resistance state. The nonvolatile memory device may be heated to at least a threshold temperature, based on application of an alternating current (AC) signal, and may be written based on application of a voltage bias.

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Patent Owner(s)

  • HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Brooks, Robert J Ft. Collins, US 33 215

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