Process for integrated circuit fabrication including a uniform depth tungsten recess technique
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United States of America Patent
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Nov 22, 2016
Grant Date -
Apr 14, 2016
app pub date -
Oct 13, 2014
filing date -
Oct 13, 2014
priority date (Note) -
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Abstract
Dummy gates are removed from a pre-metal layer to produce a first opening (with a first length) and a second opening (with a second length longer than the first length). Work function metal for a metal gate electrode is provided in the first and second openings. Tungsten is deposited to fill the first opening and conformally line the second opening, thus leaving a third opening. The thickness of the tungsten layer substantially equals the length of the first opening. The third opening is filled with an insulating material. The tungsten is then recessed in both the first and second openings using a dry etch to substantially a same depth from a top surface of the pre-metal layer to complete the metal gate electrode. Openings left following the recess operation are then filled with a dielectric material forming a cap on the gate stack which includes the metal gate electrode.
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