Metallisation for semiconductor device

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United States of America Patent

PATENT NO 10748847
APP PUB NO 20160104676A1
SERIAL NO

14849469

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Abstract

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The present disclosure relates to a semiconductor device comprising a metallisation stack. The metallisation stack may include a first metallisation layer and a second metallisation layer. The first metallisation layer may be electrically connected to the second metallisation layer by a two or more stacked inter-metal vias.

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Patent Owner(s)

Patent OwnerAddress
NEXPERIA B VJONKERBOSPLEIN 52 NIJMEGEN 6534AB

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huiskamp, Paul Wijchen, NL 1 1
Notermans, Godfried Henricus Josephus Hamburg, DE 5 15

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