Methods of forming integrated circuit devices

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United States of America Patent

PATENT NO 9780107
SERIAL NO

14969709

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Methods of forming integrated circuit devices containing memory cells over a first region of a semiconductor substrate and gate structures over a second region of the semiconductor substrate recessed from the first region. The methods include forming a metal that is common to both the memory cells and the gate structures.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Albini, Giulio Boise, US 30 116
Bacciaglia, Paola Ornago, IT 5 12
Mariani, Marcello Milan, IT 71 384
Meotto, Umberto M Rivoli, IT 14 78
Tessariol, Paolo Boise, US 84 278

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