THIN FILM MANUFACTURING METHOD AND ATOMIC LAYER DEPOSITION APPARATUS
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United States of America Patent
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Apr 21, 2016
app pub date -
Aug 24, 2015
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Oct 20, 2014
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Abstract
A method of manufacturing a silicon nitride (Si3N4) film at low temperature using an atomic layer deposition (ALD), and an ALD apparatus for the same are disclosed. The method of manufacturing a Si3N4 film uses a silicon precursor material including silicon as a source gas, an N2 gas activated by plasma as a reaction gas, and an N2 gas as a purge gas, and manufactures a Si3N4 film by providing gases in an order of the source gas, the purge gas, the reaction gas, and the purge gas.
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