Single electron transistor having nanoparticles of uniform pattern arrangement

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United States of America Patent

PATENT NO 9748507
APP PUB NO 20160118608A1
SERIAL NO

14987300

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Abstract

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A transistor and a fabrication method thereof. A transistor includes a channel region including linkers, formed on a substrate, and metallic nanoparticles grown from metal ions bonded to the linkers, a source region disposed at one end of the channel region, a drain region disposed at the other end of the channel region opposite of the source region, and a gate coupled to the channel region and serving to control migration of charges in the channel region. The metallic nanoparticles have a substantially uniform pattern arrangement in the channel region.

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Patent Owner(s)

  • SK INNOVATION CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Jun-Hyung Daejeon, KR 188 2520
Kim, Tae-Hee Seoul, KR 63 506
Lee, Young-Keun Seoul, KR 163 2875
You, Hong Daejeon, KR 16 53

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