Low threshold voltage CMOS device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9455203
APP PUB NO 20160126145A1
SERIAL NO

14992739

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Abstract

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A replacement metal gate process in which a high-k dielectric is applied. The high-k dielectric may be doped with lanthanum in an NMOS region or aluminum in a PMOS region. A dummy gate structure may be formed over the high-k dielectric and etched to form an opening over the NMOS region and an opening over the PMOS region. Thereafter, first work function metals are deposited in the NMOS opening and second work function metals are applied in the PMOS openings. A suitable gate electrode material may then fill the remainder of the NMOS and PMOS openings.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.;INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ando, Takashi Tuckahoe, US 718 5576
Choi, Changhwan Seoul, KR 27 309
Choi, Kisik Watervliet, US 157 1898
Narayanan, Vijay New York, US 308 5568

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