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Abstract

The invention relates to an image sensor specially adapted to vision in low-light conditions (notably night vision).The sensor is formed on an integrated circuit chip starting from a silicon substrate. It comprises: a matrix of rows and columns of active pixels each comprising at least one photodiode and transistors, control circuits for the matrix, external to the matrix, and signal read circuits, external to the matrix. The photodiodes of the sensor are formed within an active layer of single-crystal silicon whose resistivity is at least 500 ohms·cm if this active layer is an epitaxial layer grown on the silicon substrate and at least 2000 ohms·cm if this active layer consists of the upper part of the silicon substrate. The control circuits and the read circuits of the sensor are formed in at least one doped global well, of the same type as the active layer of single-crystal silicon and having a resistivity lower than or equal to 30 ohms·cm, this well being formed within the active layer and not including the matrix.

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First Claim