Substrate with silicon carbide film, semiconductor device, and method for producing substrate with silicon carbide film
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 3, 2017
Grant Date -
May 5, 2016
app pub date -
Oct 29, 2015
filing date -
Oct 31, 2014
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A substrate with a silicon carbide film includes a silicon substrate, a SiC film, and a mask 4. The SiC film has a film 31 including openings 35 on the silicon substrate and a film 32 provided on the upper side of the film 31. The mask 4 has a mask 41 provided on the upper side of the silicon substrate and including openings 45 and a mask 42 covering at least part of the mask 41 located in the openings 35 and the side surfaces of the openings 35 and including openings 46. The width W1 of the opening 45, the thickness T1 (μm) of the mask 41, and the thickness D (μm) of the film 31 at a position corresponding to the opening 45 satisfy the following relationships: T1
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully