METHOD OF MANUFACTURING MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING APPARATUS OF THE SAME
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United States of America Patent
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May 12, 2016
app pub date -
Mar 11, 2015
filing date -
Mar 11, 2015
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Abstract
According to one embodiment, a method of manufacturing a magnetoresistive memory device includes forming a first magnetic layer on a substrate, forming a cap layer on the first magnetic layer, heating a base including the cap layer after the cap layer is formed, forming a nonmagnetic layer on the cap layer while the base is heated, cooling the base including the nonmagnetic layer after the nonmagnetic layer is formed, and forming a second magnetic layer on the nonmagnetic layer after the base is cooled.
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