Method for producing SiC substrate

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United States of America Patent

PATENT NO 9396945
APP PUB NO 20160133465A1
SERIAL NO

14898501

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Abstract

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A method that includes at least a CMP step of subjecting both a Si surface (1a) and a C surface (1b) of an SiC substrate (1) to double-sided polishing using a CMP (Chemical Mechanical Polishing) method with a C surface/Si surface processing selectivity ratio of 3.0 or greater.

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Patent Owner(s)

  • SHOWA DENKO K.K.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sasaki, Yuzo Hikone, JP 30 201

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