Junctionless tunnel fet with metal-insulator transition material

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9419115
APP PUB NO 20160133730A1
SERIAL NO

14876006

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Embodiments of the present disclosure provide an integrated circuit (IC) structure, which can include: a doped semiconductor layer having a substantially uniform doping profile; a first gate structure positioned on the doped semiconductor layer; and a second gate structure positioned on the doped semiconductor layer, the second gate structure including a metal-insulator transition material and a gate dielectric layer separating the metal-insulator transition material from the doped semiconductor layer.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bajaj, Mohit Bangalore, IN 33 106
Gundapaneni, Suresh Bangalore, IN 8 24
Konar, Aniruddha Bangalore, IN 12 28
Murali, Kota V R M Bangalore, IN 28 161
Nowak, Edward J Essex Junction, US 635 14983

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Feb 16, 2024
11.5 Year Payment $7400.00 $3700.00 $1850.00 Feb 16, 2028
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00