Semiconductor devices containing an epitaxial perovskite/doped strontium titanate structure

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United States of America Patent

PATENT NO 9590100
APP PUB NO 20160133753A1
SERIAL NO

14994821

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Semiconductor devices are provided such as, ferroelectric transistors and floating gate transistors, that include an epitaxial perovskite/doped strontium titanate structure formed above a surface of a semiconductor substrate. The epitaxial perovskite/doped strontium titanate structure includes a stack of, in any order, a doped strontium titanate and a perovskite type oxide.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dubourdieu, Catherine A Grenoble, FR 7 84
Frank, Martin M Dobbs Ferry, US 125 1458
Narayanan, Vijay New York, US 308 5551

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