RADICAL ASSISTED CURE OF DIELECTRIC FILMS

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United States of America Patent

APP PUB NO 20160138161A1
SERIAL NO

14815283

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Abstract

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Embodiments described herein generally relate to apparatus and methods for reducing hydrogen content of a film. Apparatus may include a chamber body, a support member coupled to a lift mechanism, and a source of hydrogen radicals. The chamber may have a radical conduit coupled with the source of hydrogen radicals at a first end and coupled with the chamber body at a second end. The chamber may have a dual-channel showerhead coupled with a lid rim. The dual-channel showerhead may be disposed between the radical source and the support member. The showerhead may face the support member. Methods may include forming a first film having a hydrogen content of about 1% to about 50% on a substrate in a chamber, and exposing the first film to hydrogen radicals to form a second film having reduced hydrogen content.

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Patent Owner(s)

Patent OwnerAddress
APPLIED MATERIALS INC3050 BOWERS AVENUE SANTA CLARA CA 95054

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHAN, Kelvin San Ramon, US 122 2182
CHEN, Yihong San Jose, US 58 1058
MALLICK, Abhijit Basu Fremont, US 249 10245
MUKHERJEE, Shaunak Santa Clara, US 17 39

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