Plasma processing apparatus
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United States of America Patent
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Feb 28, 2017
Grant Date -
May 19, 2016
app pub date -
Sep 5, 2015
filing date -
Nov 17, 2014
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Abstract
Provided is a plasma processing apparatus including: a circular waveguide connected with a vacuum vessel, and through which a circularly polarized wave of an electric field for plasma formation propagates; a processing chamber which is arranged below the circular waveguide, and in which plasma is formed; a circularly polarized wave generator, which is arranged in the waveguide; a circularly polarized wave adjuster which is connected with the circular waveguide below the circularly polarized wave generator; a circularly polarized wave detector which is below the circularly polarized wave adjuster; and a controller which adjusts an operation of the circularly polarized wave adjuster according to an output from the circularly polarized wave detector, in which the circularly polarized wave adjuster adjusts a length of a protrusion of a dielectric stub into the circular waveguide based on a signal from the controller.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- HITACHI HIGH-TECHNOLOGIES CORPORATION
International Classification(s)
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- [Patents Count]
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Tamura, Hitoshi | Tokyo, JP | 77 | 1492 |
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