HETERO-BIPOLAR TRANSISTOR AND METHOD FOR PRODUCING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Nov 18, 2015
filing date -
Nov 18, 2014
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A semiconductor device provided with a substrate made of material except for semiconductors and having thermal conductivity greater than that of the semiconductor material. The semiconductor device provides, on the support, a metal layer, a primary mesa, and electrodes formed on the primary mesa. The metal layer, which is in contact with the primary mesa, may be made of at least one of tungsten (W), molybdenum (Mo), and tantalum (Ta) with a thickness of the 10 to 60 nm.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully