Importance

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Abstract

A device-embedded image sensor includes an image sensor formed in a first semiconductor substrate; a top conductive pad formed on a top surface of the first semiconductor substrate; and a semiconductor device formed in a second semiconductor substrate bonded to a bottom surface of the first semiconductor substrate, the semiconductor device electrically connected to the top conductive pad. A method for fabricating a device-embedded image sensor from a CMOS image sensor wafer assembly that includes an image sensor and a conductive pad. The method includes exposing the conductive pad; forming an isolation layer; exposing a surface of each conductive pad; forming a patterned redistribution layer (RDL) having a plurality of RDL elements on the isolation layer; electrically isolating adjacent RDL elements; and laminating the CMOS image sensor wafer assembly and a semiconductor device wafer to form undiced device-embedded image sensors.

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First Claim