Diamond Like Carbon (DLC) in a Semiconductor Stack as a Selector for Non-Volatile Memory Application
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United States of America Patent
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Issued Date -
May 19, 2016
app pub date -
Nov 18, 2014
filing date -
Nov 18, 2014
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Abstract
Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a trilayer stack of diamond like carbon/silicon/diamond like carbon. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or a combination thereof.
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