Process for manufacturing a semiconductor device comprising an empty trench structure and semiconductor device manufactured thereby

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9553209
APP PUB NO 20160141428A1
SERIAL NO

14856148

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

The process is based upon the steps of: forming a trench in a body including a substrate and at least one insulating layer; and depositing a metal layer above the body for closing the open end or mouth of the trench. The trench is formed by selectively etching the body, wherein the reaction by-products deposit on the walls of the trench and form a passivation layer along the walls of the trench and a restriction element in proximity of the mouth of the trench.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • STMICROELECTRONICS S.R.L.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fiumara, Antonino Messina, IT 2 2

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Jul 24, 2024
11.5 Year Payment $7400.00 $3700.00 $1850.00 Jul 24, 2028
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00